dm p2021ufdf document number: d s 37195 rev. 2 - 2 1 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c - 2 0v 1 6 m ? @ v gs = - 4.5 v - 9.0a 22 m ? @ v gs = - 2 .5v - 7.7a description and applications this mosfet is designed to minimize on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? battery m anage ment a pplication ? power m anagement f unctions ? dc - dc converters features and benefits ? 0.6mm p rofile C i deal for l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? esd protected gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn2020 - 6 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0. 00 7 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dm p2021 u fdf - 7 u - dfn2020 - 6 3 , 000 /tape & reel dmp2021 u fdf - 13 u - dfn2020 - 6 10,000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/prod ucts/packages.html. marking information date code key year 2014 2015 201 6 201 7 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d p1 = product type marking code ym = date code marking y = year (ex: c = 201 5 ) m = month (ex: 9 = september) u - dfn 2020 - 6 equivalent circuit pin1 bottom view top view pin out bottom view p1 y m u - dfn 2020 - 6 esd protected e4 d s g g ate protection diode
dm p2021ufdf document number: d s 37195 rev. 2 - 2 2 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = +25c t a = +70c i d - 9 .0 - 7.2 a t<10s t a = +25c t a = +70c i d - 11.1 - 8.9 a pulsed drain curren t ( 10 dm - 60 a continuous source - drain diode current (note 6 ) t a = +25c i s - 2.4 a avalanche current (note 7) l = 0.1mh i a s - 27 a avalanche energy (note 7) l = 0.1mh e a s 38 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0. 73 w t a = + 70c 0.4 7 thermal resistance, junction to ambient (note 5 ) s teady s tate r ? ja 1 7 2 c/w t< 10 s 12 1 total power dissipation (note 6 ) t a = + 25c p d 2.0 2 w t a = + 70c 1. 3 0 thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 6 3 c/w t<10s 4 2 thermal resistance, junction to case (note 6 ) s teady s tate r ? j c 18 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 20 gs = 0v, i d = - 250 a j = + 25c i dss ds = - 20 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 0. 35 ds = v gs , i d = - 250 a ds (on) gs = - 4. 5 v, i d = - 7.0a 15 2 2 v gs = - 2.5 v, i d = - 5.0a 19 4 0 v gs = - 1.8 v, i d = - 3.0a 21 8 0 v gs = - 1. 5 v, i d = - 1.0a diode forward voltage v sd gs = 0v, i s = - 1.0 a dynamic characteristic s (note 9 ) input capacitance c iss ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g ds = - 15 v, i d = - 4.0 a total gate charge ( v gs = - 8 v ) q g gs gd d(on) ds = - 15 v, v g s = - 4.5 v, r g = 1 d = - 4.0 a turn - on rise time t r d(off) f rr f = - 1.0 a, di/dt = 1 00a/ rr f = - 1.0 a, di/dt = 1 00a/ notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate . 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm p2021ufdf document number: d s 37195 rev. 2 - 2 3 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 v = -1.0v gs v = -1.2v gs v = -1.5v gs v = -4.0v gs v = -8.0v gs v = -4.5v gs v = -3.0v gs v = -2.0v gs v = -1.8v gs v = -0.9v gs v = -2.5v gs t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = a gs d -10 v = v i = a gs d -1.8 -5 i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 v = -1.8v gs v = -4.5v gs v = -1.5v gs v = -2.5v gs t , junction temperature ( c) j ? figure 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.8 1.2 1.6 2 -50 -25 0 25 50 75 100 125 150 v = -1.8v i = -5a gs d v = -2.5v i = -10a gs d i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 2 4 6 8 10 12 14 16 18 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs 20 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds
dm p2021ufdf document number: d s 37195 rev. 2 - 2 4 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 2 4 6 8 10 12 t = 85 c a ? 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a ? t = 150 c a ? t = -55 c a ? t = 25 c a ? v , drain-source voltage (v) figure 11 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = -4.5v single pulse gs dut on 1 * mrp board 0.01 0.1 1 10 100 0.01 0.1 1 10 100 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 9 ypical junction capacitance ds 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c oss c rss f = 1mhz c iss q , total gate charge (nc) figure 10 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 v = -15v i = -4a ds d t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d
dm p2021ufdf document number: d s 37195 rev. 2 - 2 5 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.9 d = 0.7 r (t) = r(t) * r thja thja r = 172c/w thja duty cycle, d = t1/ t2
dm p2021ufdf document number: d s 37195 rev. 2 - 2 6 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. u - dfn2020 - 6 (type f) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d3 0.33 0.43 0.38 e 0.65 bsc e2 0.863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e3 0.65 0.75 0.70 l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc all dimensions in mm suggested pad layout please see ap0200 1 at http://www.diodes.com/datasheets/ap0200 1. pdf for the latest version. dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 pin1 y4 y2 y x c x3 y1 x1 x2 y3 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e3 d3 z1
dm p2021ufdf document number: d s 37195 rev. 2 - 2 7 of 7 www.diodes.com febru ary 2015 ? diodes incorporated d mp2021ufdf advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, internatio nal or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support di odes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devi ces or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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